August 15, 2017 Volume 13 Issue 31

Electrical/Electronic News & Products

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Intro to reed switches, magnets, magnetic fields

This brief introductory video on the DigiKey site offers tips for engineers designing with reed switches. Dr. Stephen Day, Ph.D. from Coto Technology gives a solid overview on reed switches -- complete with real-world application examples -- and a detailed explanation of how they react to magnetic fields.
View the video.


Bi-color LEDs to light up your designs

Created with engineers and OEMs in mind, SpectraBright Series SMD RGB and Bi-Color LEDs from Visual Communi-cations Company (VCC) deliver efficiency, design flexibility, and control for devices in a range of industries, including mil-aero, automated guided vehicles, EV charging stations, industrial, telecom, IoT/smart home, and medical. These 50,000-hr bi-color and RGB options save money and space on the HMI, communicating two or three operating modes in a single component.
Learn more.


All about slip rings: How they work and their uses

Rotary Systems has put together a really nice basic primer on slip rings -- electrical collectors that carry a current from a stationary wire into a rotating device. Common uses are for power, proximity switches, strain gauges, video, and Ethernet signal transmission. This introduction also covers how to specify, assembly types, and interface requirements. Rotary Systems also manufactures rotary unions for fluid applications.
Read the overview.


Seifert thermoelectric coolers from AutomationDirect

Automation-Direct has added new high-quality and efficient stainless steel Seifert 340 BTU/H thermoelectric coolers with 120-V and 230-V power options. Thermoelectric coolers from Seifert use the Peltier Effect to create a temperature difference between the internal and ambient heat sinks, making internal air cooler while dissipating heat into the external environment. Fans assist the convective heat transfer from the heat sinks, which are optimized for maximum flow.
Learn more.


EMI shielding honeycomb air vent panel design

Learn from the engineering experts at Parker how honeycomb air vent panels are used to help cool electronics with airflow while maintaining electromagnetic interference (EMI) shielding. Topics include: design features, cell size and thickness, platings and coatings, and a stacked design called OMNI CELL construction. These vents can be incorporated into enclosures where EMI radiation and susceptibility is a concern or where heat dissipation is necessary. Lots of good info.
Read the Parker blog.


What is 3D-MID? Molded parts with integrated electronics from HARTING

3D-MID (three-dimensional mechatronic integrated devices) technology combines electronic and mechanical functionalities into a single, 3D component. It replaces the traditional printed circuit board and opens up many new opportunities. It takes injection-molded parts and uses laser-direct structuring to etch areas of conductor structures, which are filled with a copper plating process to create very precise electronic circuits. HARTING, the technology's developer, says it's "Like a PCB, but 3D." Tons of possibilities.
View the video.


Loss-free conversion of 3D/CAD data

CT CoreTech-nologie has further developed its state-of-the-art CAD converter 3D_Evolution and is now introducing native interfaces for reading Solidedge and writing Nx and Solidworks files. It supports a wide range of formats such as Catia, Nx, Creo, Solidworks, Solidedge, Inventor, Step, and Jt, facilitating smooth interoperability between different systems and collaboration for engineers and designers in development environments with different CAD systems.
Learn more.


Top 5 reasons for solder joint failure

Solder joint reliability is often a pain point in the design of an electronic system. According to Tyler Ferris at ANSYS, a wide variety of factors affect joint reliability, and any one of them can drastically reduce joint lifetime. Properly identifying and mitigating potential causes during the design and manufacturing process can prevent costly and difficult-to-solve problems later in a product lifecycle.
Read this informative ANSYS blog.


Advanced overtemp detection for EV battery packs

Littelfuse has introduced TTape, a ground-breaking over-temperature detection platform designed to transform the management of Li-ion battery systems. TTape helps vehicle systems monitor and manage premature cell aging effectively while reducing the risks associated with thermal runaway incidents. This solution is ideally suited for a wide range of applications, including automotive EV/HEVs, commercial vehicles, and energy storage systems.
Learn more.


Benchtop ionizer for hands-free static elimination

EXAIR's Varistat Benchtop Ionizer is the latest solution for neutralizing static on charged surfaces in industrial settings. Using ionizing technology, the Varistat provides a hands-free solution that requires no compressed air. Easily mounted on benchtops or machines, it is manually adjustable and perfect for processes needing comprehensive coverage such as part assembly, web cleaning, printing, and more.
Learn more.


LED light bars from AutomationDirect

Automation-Direct adds CCEA TRACK-ALPHA-PRO series LED light bars to expand their offering of industrial LED fixtures. Their rugged industrial-grade anodized aluminum construction makes TRACKALPHA-PRO ideal for use with medium to large-size industrial machine tools and for use in wet environments. These 120 VAC-rated, high-power LED lights provide intense, uniform lighting, with up to a 4,600-lumen output (100 lumens per watt). They come with a standard bracket mount that allows for angle adjustments. Optional TACLIP mounts (sold separately) provide for extra sturdy, vibration-resistant installations.
Learn more.


World's first metalens fisheye camera

2Pi Optics has begun commercial-ization of the first fisheye camera based on the company's proprietary metalens technology -- a breakthrough for electronics design engineers and product managers striving to miniaturize the tiny digital cameras used in advanced driver-assistance systems (ADAS), AR/VR, UAVs, robotics, and other industrial applications. This camera can operate at different wavelengths -- from visible, to near IR, to longer IR -- and is claimed to "outperform conventional refractive, wide-FOV optics in all areas: size, weight, performance, and cost."
Learn more.


Orbex offers two fiber optic rotary joint solutions

Orbex Group announces its 700 Series of fiber optic rotary joint (FORJ) assemblies, supporting either single or multi-mode operation ideal for high-speed digital transmission over long distances. Wavelengths available are 1,310 or 1,550 nm. Applications include marine cable reels, wind turbines, robotics, and high-def video transmission. Both options feature an outer diameter of 7 mm for installation in tight spaces. Construction includes a stainless steel housing.
Learn more.


Mini tunnel magneto-resistance effect sensors

Littelfuse has released its highly anticipated 54100 and 54140 mini Tunnel Magneto-Resistance (TMR) effect sensors, offering unmatched sensitivity and power efficiency. The key differentiator is their remarkable sensitivity and 100x improvement in power efficiency compared to Hall Effect sensors. They are well suited for applications in position and limit sensing, RPM measurement, brushless DC motor commutation, and more in various markets including appliances, home and building automation, and the industrial sectors.
Learn more.


Panasonic solar and EV components available from Newark

Newark has added Panasonic Industry's solar inverters and EV charging system components to their power portfolio. These best-in-class products help designers meet the growing global demand for sustainable and renewable energy mobility systems. Offerings include film capacitors, power inductors, anti-surge thick film chip resistors, graphite thermal interface materials, power relays, capacitors, and wireless modules.
Learn more.


30 billion switches on a fingernail-sized chip: IBM Research Alliance builds new transistor for 5-nm technology

IBM Research scientist Nicolas Loubet holds a wafer of chips with 5-nm silicon nanosheet transistors manufactured using an industry-first process that can deliver 40 percent performance enhancement at fixed power, or 75 percent power savings at matched performance. [Credit: Connie Zhou]

 

 

 

 

IBM, its Research Alliance partners GLOBALFOUNDRIES and Samsung, and equipment suppliers have developed an industry-first process to build silicon nanosheet transistors that will enable 5-nanometer (nm) chips. The details of the process were presented at the 2017 Symposia on VLSI Technology and Circuits conference in Kyoto, Japan, in June. In less than two years since developing a 7-nm test node chip with 20 billion transistors, scientists have paved the way for 30 billion switches on a fingernail-sized chip.

The resulting increase in performance will help accelerate cognitive computing, the Internet of Things (IoT), and other data-intensive applications delivered in the cloud. The power savings could also mean that the batteries in smartphones and other mobile products could last two to three times longer than today's devices before needing to be charged.

Scientists working as part of the IBM-led Research Alliance at the SUNY Polytechnic Institute Colleges of Nanoscale Science and Engineering's NanoTech Complex in Albany, NY, achieved the breakthrough by using stacks of silicon nanosheets as the device structure of the transistor, instead of the standard FinFET architecture, which is the blueprint for the semiconductor industry up through 7-nm node technology.

"For business and society to meet the demands of cognitive and cloud computing in the coming years, advancement in semiconductor technology is essential," said Arvind Krishna, senior vice president, Hybrid Cloud, and director, IBM Research. "That's why IBM aggressively pursues new and different architectures and materials that push the limits of this industry, and brings them to market in technologies like mainframes and our cognitive systems."


VIDEO: The 5-nanometer transistor breakthrough -- and what's in it for you.

The silicon nanosheet transistor demonstration, as detailed in the Research Alliance paper "Stacked Nanosheet Gate-All-Around Transistor to Enable Scaling Beyond FinFET," and published by VLSI, proves that 5-nm chips are possible, more powerful, and not too far off in the future.

Compared to the leading-edge 10-nm technology available in the market, a nanosheet-based 5-nm technology can deliver 40 percent performance enhancement at fixed power, or 75 percent power savings at matched performance. This improvement enables a significant boost to meeting the future demands of artificial intelligence (AI) systems, virtual reality, and mobile devices.

Building a new switch
"As we make progress toward commercializing 7-nm in 2018 at our Fab 8 manufacturing facility, we are actively pursuing next-generation technologies at 5-nm and beyond to maintain technology leadership and enable our customers to produce a smaller, faster, and more cost efficient generation of semiconductors," said Gary Patton, CTO and Head of Worldwide R&D at GLOBALFOUNDRIES.

IBM Research has explored nanosheet semiconductor technology for more than 10 years. This work is the first in the industry to demonstrate the feasibility to design and fabricate stacked nanosheet devices with electrical properties superior to FinFET architecture.

This is a scan of IBM Research Alliance's 5-nm transistor, built using an industry-first process to stack silicon nanosheets as the device structure -- achieving a scale of 30 billion switches on a fingernail-sized chip that will deliver significant power and performance enhancements over today's state-of-the-art 10-nm chips. [Credit: IBM]

 

 

 

 

This same Extreme Ultraviolet (EUV) lithography approach used to produce the 7-nm test node and its 20 billion transistors was applied to the nanosheet transistor architecture. Using EUV lithography, the width of the nanosheets can be adjusted continuously, all within a single manufacturing process or chip design. This adjustability permits the fine-tuning of performance and power for specific circuits -- something not possible with today's FinFET transistor architecture production, which is limited by its current-carrying fin height. Therefore, while FinFET chips can scale to 5-nm, simply reducing the amount of space between fins does not provide increased current flow for additional performance.

Part of IBM's $3 billion, five-year investment in chip R&D (announced in 2014), the proof of nanosheet architecture scaling to a 5-nm node continues IBM's legacy of historic contributions to silicon and semiconductor innovation. They include the invention or first implementation of the single cell DRAM, the Dennard Scaling Laws, chemically amplified photoresists, copper interconnect wiring, Silicon on Insulator, strained engineering, multi-core microprocessors, immersion lithography, high-speed SiGe, High-k gate dielectrics, embedded DRAM, 3D chip stacking, and Air gap insulators.

Source: IBM Research

Published August 2017

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